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 KSC4468
KSC4468
Audio Power Amplifier
* * * * High Current Capability : IC=15A High Power Dissipation Wide S.O.A Complement to KSA1695
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol
VCBO VCEO VEBO IC ICP PC TJ TSTG
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature
Value 160 140 6 8 16 80 150 - 55 ~ 150
Units V V V A A W C C
Electrical Characteristics TC=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob tON tF tSTG
* Pulse Test : PW=20s
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current
* DC
Test Condition IC=5mA, IE=0 IC=10mA, RBE= IE=5mA, IC=0 VCB=80V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC=5A, IB=0.5A VCE=5V, IC=1A VCE=5V, IC=1A VCB=10V, f=1MHz VCC=20V, IC=1A=10IB1=-10IB2 RL=20
Min. 160 140 6
Typ.
Max.
Units V V V
0.1 0.1 60 20 200 2.5 1.5 30 210 0.26 0.68 6.68
mA mA
Current Gain
Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Fall Time Storage Time
V V MHz pF s s s
hFE Classification
Classification hFE1 O 60 ~ 120 Y 100 ~ 200
(c)2000 Fairchild Semiconductor International
Rev. B, Noverber 2000
KSC4468
Typical Characteristics
18 16
1000
IC[A], COLLECTOR CURRENT
14 12 10 8 6
IB = 400mA IB = 350mA IB = 300mA
VCE = 5V
hFE, DC CURRENT GAIN
IB = 250mA IB = 200mA IB = 150mA IB = 100mA
100
10
IB = 50mA
4 2
IB = 0
0 0 1 2 3 4 5 6 7 8 9 10
1 0.01
0.1
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 1. Static Characterstic
Figure 2. DC current Gain
10
10
VCE(sat)[V], SATURATION VOLTAGE
1
VBE(sat)[V], SATURATION VOLTAGE
IC = 10 IB
IC = 10 IB
1
0.1
0.1
0.01 0.01
0.1
1
10
100
0.01 0.01
0.1
1
10
100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
12
100
VCE = 5V
IC[A], COLLECTOR CURRENT
10
IC MAX. (Pulse)
10
IC[A], COLLECTOR CURRENT
10 0
DC
m
s
IC MAX. (DC)
8
m 10 s
6
1
4
0.1
2
*SINGLE NONREPETITIVE PULSE TC =25[ C]
o
0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01 0.1
1
10
100
VBE[V], BASE-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Safe Operating Area
(c)2000 Fairchild Semiconductor International
VCEO MAX
Rev. B, Noverber 2000
KSC4468
Typical Characteristics (Continued)
140
120
PC[W], POWER DISSIPATION
100
80
60
40
20
0 0 25 50
o
75
100
125
150
175
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
(c)2000 Fairchild Semiconductor International
Rev. B, Noverber 2000
KSC4468
Package Demensions
TO-3P
15.60 0.20
3.80 0.20
13.60 0.20 o3.20 0.10 9.60 0.20
4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
(c)2000 Fairchild Semiconductor International Rev. B, Noverber 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2000 Fairchild Semiconductor International
Rev. E


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